Publications

A searchable database of publications from the Semiconductor Physics Group. All fields are optional.
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88 items listed; Searching for: Authors include Paul

“Sidewall Quantum Wires on GaAs(001) Substrates”
Helgers Paul L. J., Sanada Haruki, Kunihashi Yoji, Rubino Antonio, Ford Christopher J. B., Biermann Klaus and Santos Paulo V.,
2019, Phys. Rev. Applied, 11, 064017.

“Si/SiGe quantum cascade superlattice designs for terahertz emission”
Matmon G., Paul D. J., Lever L., Califano M., Ikonic Z., Kelsall R. W., Zhang J., (e D. Chrastina, Isella G., Kanel H. von, Muller E. and Neels A.,
2010, J. Appl. Phys., 107, 053109.

“Variation of the hopping exponent in disordered silicon MOSFETs”
Ferrus T., George R., Barnes C. H. W., Lumpkin N., Paul D. J. and Pepper M.,
2008, J. Phys.: Condens. Matt., 20, 415226.

“Determination of complex refractive index of thin metal films from terahertz time-domain spectroscopy”
Zhou D., Parrott E., Paul D. J. and Zeitler J. A.,
2008, J. Appl. Phys., 104, 053110.

“Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs”
Ferrus T., George R., Barnes C. H. W., Lumpkin N., Paul D. J. and Pepper M.,
2007, Physica B, 400, 218–223.

“Si/SiGe n-type resonant tunneling diodes fabricated using in situ hydrogen cleaning”
Suet Z., Paul D. J., Zhang J. and Turner S. G.,
2007, Appl. Phys. Lett., 90, 203501.

“Interwell relaxation times in p-Si/SiGe asymmetric quantum well structures: Role of interface roughness”
Califano M., Vinh N. Q., Phillips P. J., Ikonic Z., Kelsall R. W., Harrison P., Pidgeon C. R., Murdin B. N., Paul D. J., Townsend P., Zhang J., Ross I. M. and Cullis A. G.,
2007, Phys. Rev. B, 75, 045338.

“Activation mechanisms in sodium-doped Silicon MOSFETs”
Ferrus T., George R., Barnes C. H. W., Lumpkin N., Paul D. J. and Pepper M.,
2007, J Phyics : Condensed Matter, 19, 226216.

“Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering”
Zhao M., Karim A., Ni WX., Pidgeon C. R., Phillips P. J., Carder D., Murdin B. N., Fromherz T. and Paul D. J.,
2006, J. of Luminescence, 121 (2), 403–408.

“Time-resolved dynamics of electronic transitions in silicon donor impurities”
Vinh N. Q., Redlich B., Meer A. F. G. van der, Paul D. J., Freeman J., Lynch S. A., Pidgeon C. R., Nikzad L. and Murdin B. N., accepted for publication.

“Doubling speed using strained Si/SiGe CMOS technology”
Olsen S. H., Temple M., O'Neill A. G., Paul D. J., Chattopadhyay S., Kwa K. S. K. and Driscoll L. S.,
2006, Thin Solid Films, 508, 338–341.

“Low-temperature molecular beam epitaxy growth of Si/SiGe THz quantum cascade structures on virtual substrates”
Zhao M., Ni W-X., Townsend P., Lynch S. A., Paul D. J., Hsu C. C. and Chang M. N.,
2006, Thin Solid Films, 508, 24–28.

“Low-Loss Surface-Mode Waveguides forTerahertz Si/SiGe Quantum Cascade Lasers”
Rossi A. De, Carras M. and Paul D. J.,
2006, IEEE J of Quantum Electronics, 42, 1233–1238.

“Toward silicon based lasers for terahertz sources”
Lynch S. A., Paul D. J., Townsend P., Matmon G., Suet Z., Kelsall R. W., Ikonic Z., Harrison P., Zhang J., Norris D. J., Culllis A. G., Pigeon C. R., Murzyn P., Bain M., Gamble H. S., Zhao M. and Ni W-X.,
2006, IEEE Journal of Seclected Topics in Quantum Electronics, 12, 1570–1578.

“Evidence for multiple impurity bands in sodium-doped silicon MOSFETs”
Ferrus T., George R., Barnes C. H. W., Lumpkin N., Paul D. J. and Pepper M.,
2006, Phys. Rev. B Rapid Communications, 73, 041304–1to4.

“Pump-probe measurement of lifetime engineering in SiGe quantum wells below the optical phonon energy”
Pidgeon C. R., Phillips P. J., Carder D., Murdin B. N., Fromherz T., Paul D. J., Ni W-X. and Zhao M.,
2005, Semicond. Sci. Tech., 20, L50–L52.

“Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon”
Lynch S. A., Townsend P., Matmon G., Paul D. J., Bain M., Gamble H. S., Zhang J., Ikonic Z., Kelsall R. W. and Harrison P.,
2005, Appl. Phys. Lett., 87, 101114–1–3.

“SiGe quantum cascade structures for light emitting devices”
Zhang J., Li X. B., Neave J. H., Norris D. J., Cullis A. G., Kelsall R. W., Lynch S., Townsend P., Paul D. J. and Fewster P. F.,
2005, J. Cryst. Growth, 278, 488–494.

“Growth and structural characterisation of Si/SiGe heterostructures for optoelectronic applications”
Li X. B., Neave J. H., Norris D. J., Cullis A. G., Paul D. J., Kelsall R. W. and Zhang J.,
2005, Opt Mater, 27, 855–858.

“Investigation of the injection velocity of holes in strained Si pMOSFETs”
Nicholas G., Grasby T. J., Parker E. H. C., Whall T. E., Paul D. J., Evans A. G. R. and Kanel H. von,
2005, Semicond. Sci. Tech., 20, L20–L22.

“Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime.”
Shlimak I., Ginodman V., Gerber A. B., Milner A., Friedland K. -J. and Paul D. J.,
2005, Europhys. Lett., 69, 997–1002.

“Optical cavities for Si/SiGe tetrahertz quantum cascade emitters”
Kelsall R. W., Ikonic Z., Harrison P., Lynch S. A., Townsend P., Paul D. J., Norris D. J., Liew S. L., Cullis A. G., Li X., Zhang J., Bain M. and Gamble H. S.,
2005, Optical Materials, 27, 851–854.

“Silicon Quantum Integrated Circuits: Silicon Germanium Heterostructures Devices: Basics and Realisation”
Kasper E. and Paul D. J.,
2005, Springer - Verlag.

“Strained-Si n-MOS surface-channel and buried Si0.7Ge0.3 compressively-strained p-MOS fabricated in a 0.25um heterostructure CMOS process”
Paul D. J., Temple M., Olsen S. H., Oneill A. G., Ttang Y., Waite A. M., Cerrina C., Evans A. G. R., Li X., Zhang J., Norris D. J. and Cullis A. G.,
2005, Mat. Science and Semiconductor Processing, 8, 343–346.

“Intersubband lifetimes in p-Si/SiGe terahertz quantum cascade heterostructures”
Kelsall R. W., Ikonic Z., Murzyn P., Pigeon C. R., Phillips P. J., Harrison P., Lynch S. A., Townsend P., Paul D. J., Liew S. L., Norris D. J. and Cullis A. G.,
2005, Phys. Rev. B, 71, 115326–1–9.

“Electron effective mass in ultra-thin gate-oxide silicon MOSFET inversion layers”
Dragosavac M., Paul D. J., Pepper M., Fowler A. B. and Buchanan D. A.,
2005, Semicond. Sci. Tech., 20, 664–667.

“Towards SiGe terahertz VCSELs”
Kelsall R. W., Ikonic Z., Harrison P., Paul D. J., Lynch S. A., Bates R., Norris D. J., Liew S. L., Cullis A. G., Arnone D. D., Pidgeon C. R., Murzyn P., Robbins D. J. and Sore R. A.,
2004, Mat. Sci. Forum, 1-8, 453–454.

“Study of Single- and Dual-Channel Designs for High-Performance Strained-Si-SiGe n-MOSFETs”
Olsen S. H., O'Neill A. G., Chattopadhyay S., Driscoll L. S., Kwa K. S. K., Norris D. J., Cullis A. G. and Paul D. J.,
2004, IEEE Transactions on Electron Devices, 51, 1245–1253.

“In Search of a Si/SiGe THz Quantum Cascade Laser”
Paul D. J., Townsend P., Lynch S. A., Kelsall R. W., Ikonic Z., Harrison P., Norris D. J., Liew S. L., Cullis A. G., Li X., Zhang J., Bain M., Gamble H. S., Tribe W. R. and Arnone D. D.,
2004, Silicon Monolithic Integrated Circuits in RF Systems, 2004., 143–146
Silicon Monolithic Integrated Circuits in RF Systems, 2004. digest of Papers. 2004 Topical Meeting on.

“Si/SiGe heterostructures: From material and physics to devices and circuits”
Paul D. J.,
2004, Semicond. Sci. Tech., 19, R75–R108.

“Masking by weak localisation of metallic behaviour in a two-dimensional electron system in stong parallel magnetic fields”
Lewalle A., Pepper M., Ford C. J. B., Paul D. J. and Redmond G.,
2004, Phys. Rev. B, 69, 075316–1–6.

“Analysis of terahertz-emitting SiGe quantum cascade structures by transmission electron microscopy”
Liew S. L., Norris D. J., Cullis A. G., Kelsall R. W., Harrison P., Ikonic Z., Paul D. J., Lynch S. A., Bates R., Arnone D. D. and Robbins D. J.,
2003, Microscopy of Semiconducting Materials ICPS, 180, 155–158.

“Advanced TEM analysis of strain-balanced Si/SiGe resonant tunnelling diode structures”
Chang A. C. K., Norris D. J., Cullis A. G. and Paul D. J.,
2003, Microscopy of Semiconducting Materials ICPS, 180, 163–166.

“Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors”
Shlimak I., Ginodman V., Levin M., Potemski M., Maude D. K., Friedland K. J. and Paul D. J.,
2003, Phys. Rev. B, 68, 075321.

“THz intersubband dynamics in p-Si/SiGe quantum well emitter structures”
Pidgeon C. R., Murzyn P., Wells J. -P. R., Ikonic Z., Kelsall R. W., Harrison P., Lynch S. A., Paul D. J., Arnone D. D. and Robbins D. J.,
2003, Phys. Stat. Sol. (b), 237, 381–385.

“Strained Si/SiGe CMOS: high performance without re-tooling”
Olsen S., Temple M., Chattopadhyay S., O'Neill A., Paul D. J., Kwa K., Driscoll L., Waite A., Tang Y., Evans A. and Zhang J., submitted for publication.

“Far Infrared (THz) Electroluminescence from Si/SiGe Quantum Cascade Heterostructures”
Lynch S. A., Paul D. J., Bates R., Norris D. J., Cullis A. G., Ikonic Z., Kelsall R. W., Harrison P., Arnone D. D. and Pidgeon C. R.,
2003, Proceedings SPIE, 4876, 140–149.

“Interwell intersubband electroluminescence from Si/SiGe quantum cascade emitters”
Bates R., Lynch S. A., Paul D. J., Ikonic Z., Kelsall R. W., Harrison P., Liew S. L., Norris D. J., Cullis A. G., Tribe W. R. and Arnone D. D.,
2003, Appl. Phys. Lett., 83, 4092–4094.

“Electroluminescence from Si/SiGe quantum cascade emitters”
Paul D. J., Lynch S. A., Bates R., Ikonic Z., Kelsall R. W., Harrison P., Norris D. J., Liew S. L., Cullis A. G., Murzyn P., Pigeon C., Arnone D. D. and Robbins D. J.,
2003, Physica E, 16, 309–314.

“High performance n MOSFETs using a novel strained Si/SiGe CMOS architecture”
Olsen S. H., Driscoll L. S., Kwa K. S. K., Chattopadhyay S., O'Neill A. G., Waite A. M., Tang Y. T., Evans A. G. R., Norris D. J., Cullis A. G., Paul D. J. and Robbins D. J.,
2003, IEEE Trans. Elec. Dev, 50, 1961–1969.

“Si/SiGe Quantum Cascade Emitters for Terahertz Applications”
Paul D. J., Lynch S. A., Bates R., Ikonic Z., Kelsall R. W., Harrison P., Norris D. J., Liew S. L., Cullis A. G., Arnone D. D., Pigeon C. R., Murzyn P., Wells J. P. -R. and Bradley I. V.,
2003, Physica E, 16, 147–155.

“Weak localisation and the "Destruction" of the two-dimensional metallic behaviour by a parallel magnetic field”
Lewalle A., Pepper M., Ford C. J. B., Paul D. J. and Redmond G.,
2003, Inst. Phys. Conf. Ser., 171, L1.5.

“Terahertz intersubband emission from silcon-germanium quantum cascades”
Kelsall R. W., Ikonic Z., Harrison P., Lynch S. A., Bates R., Paul D. J., Norris D. J., Liew S. L., Cullis A. G., Robbins D. J., Murzyn P., Pigeon C. R. and Arnone D. D.,
2002, Thz IEEE conference 2002, 9–13.

“Localisation and metal insulator transitions in 2D”
Pepper M., Lewalle A., Hamilton A. R., Simmons M. Y., Ford C. J. B., Paul D. J. and Ritchie D. A.,
2002, Proc, SemiMag 15, Oxford.

“Picosecond intersubband dynamics in p-Si/SiGe quantum-well emitter structures”
Murzyn P., Pigeon C. R., Wells J. P. R., Bradley I. V., Ikonic Z., Kelsall R. W., Harrison P., Lynch S. A., Paul D. J., Arnone D. D., Robbins D. J., Norris D. and Cullis A. G.,
2002, Appl. Phys. Lett., 80, 1456–1458.

“Silicon Germanium quantum cascade heterostructures for far-infared emission”
Kelsall R. W., Ikonic P. H. Z., Lynch S. A., Bates R., Paul D. J., Norris D. J., Liew S. Lin, Cullis A., Robbins D. J., Murzyn P., Pigeon C. R., Arnone D. D. and Soref R. A.,
2002, Proceedings SPIE.

“Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies”
Lynch S. A., Bates R., Paul D. J., Norris D. J., Cullis A. G., Ikonic Z., Kelsall R. W., Harrison P., Arnone D. D. and Pigeon C. R.,
2002, Appl. Phys. Lett., 81, 1543–1545.

“THz intersubband dynamics in p-Si/SiGe quantum well structures”
Pidgeon C. R., Murzin P., Wells J. P. R., Bradley I. V., Ikonic Z., Kelsall R. W., Harrison P., Lynch S. A., Paul D. J., Arnone D. D., Robbins D. J., Norris D. and Cullis A. G.,
2002, Physica E, 13, 904–907.

“The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state”
Lewalle A., Pepper M., Ford C. J. B., Hwang E., Sharma S. D., Paul D. J., Griffin N., Coonan B., Redmond G. and Crean G.,
2002, Phys. Rev. B, 66, 075324–1–5.

“Si-Based electroluminescence at THz freqencies”
Lynch S. A., Dhillon S. S., Bates R., Paul D. J., Arnone D. D., Robbins D. J., Ikonic Z., Kelsall R. W., Harrison P., Norris D. J., Cullis A. G., Pidgeon C. R., Murzyn P. and Loudon A.,
2002, Mat. Sci. B, 89, 10–12.

“n-type Si/SiGe resonant tunnelling diodes”
Paul D. J., See P., Zozoulenko I. V., Berggren K. F., Hollander B., Mantl S., Griffin N., Coonan B. P., Redmond G. and Crean G. M.,
2002, Mat. Sci. B, 89, 26–29.

“Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation”
Paul D. J., Ahmed A., Churchill A. C., Robbins D. J. and Leong W. Y.,
2002, Mat. Sci. B, 89, 111–115.

“Investigation of the zero-field 2D "metallic" state with rS and kFl controlled independently”
Lewalle A., Pepper M., Ford C. J. B., Paul D. J., Griffin N., Coonan B. P., Redmond G. and Crean G. M.,
2002, Physica E, 12, 616–619.

“Nanoelectronics”
Paul D. J.,
2002, Encyclopedia of physical science and technology, 10, 285–301.

“The scaled performance of Si/Si1-x Gex resonant tunneling diodes”
See P. and Paul D. J.,
2001, IEEE Electron. Dev. Lett., 22, 0741–3106/01–.

“High performance Si/Si1-x Gex Resonant tunneling diodes”
See P., Paul D. J., Hollander B., Mantl S., Zozoulenko I. V. and Berggren K. -F.,
2001, IEEE Electron. Dev. Lett., 22, 182–184.

“Si/SiGe electron resonant tunneling diodes with graded spacer wells”
Paul D. J., See P., Bates R., Zozoulenko I. V., Berggren K. F., Hollander B., Mantl S., Griffin N., Coonan B. P., Redmond G. and Crean G. M.,
2001, Appl. Phys. Lett., 78, 4184–4186.

“Schottky gating high mobility Si/Si1-xGex 2D electron systems”
Dunford R. B., Griffin N., Paul D. J., Pepper M., Robbins D. J., Churchill A. C. and Leong W. Y.,
2000, Thin Solid Films, 369, 316–319.

“Si/SiGe electron resonant tunnelling diodes”
Paul D. J., See P., Zozoulenko I. V., Berggren K. -F., Kabius B., Hollander B. and Mantl S.,
2000, Appl. Phys. Lett., 77, 1653–1655.

“Inverted modulation-doped n-type Si/Ge heterostructures”
Dunford R. B., Ahmed A., Paul D. J., Pepper M., Churchill A. C., Robbins D. J. and Pidduck A. J.,
2000, Microelectron. Eng., 53, 205–208.

“Si/SiGe n-type inverted modulation doping using ion implantation”
Ahmed A., Dunford R. B., Paul D. J., Pepper M., Churchill A. C., Robbins D. J. and Pidduck A. J.,
2000, Thin Solid Films, 369, 324–327.

“Investigation of Si/SiGe heterostructure material using non-destructive optical techniques”
Coonan B. P., Griffin N., Beechinor J. T., Murtagh M., Redmond G., Crean G. M., Hollander B., Mantl S., Bozzo S., Lazzari J. -L., d'Avitaya F. A., Derrien J. and Paul D. J.,
2000, Thin Solid Films, 364, 75–79.

“Silicon germanium makes its mark”
Paul D. J.,
2000, Phys. World, 27–32.

“Si/Si Ge heterostructure field effect transistors fabricated using a low thermal budget CMOS process”
Dunford R. B., Paul D. J., Pepper M., Coonan B., Griffin N., Redmond G., Crean G. M., Hollander B. and Mantl S.,
2000, Microelectron. Eng., 53, 209–212.

“Silicon quantum integrated circuits”
Paul D. J., Coonan B., Redmond G., Crean G. M., Hollander B., Mantl S. and Zozoulenko I.,
1999, Future Trends in Microelectronics (1999), 183–192.

“Dislocation-induced lateral depletion in a high mobility Si/SiGe two dimensional electron gas”
Griffin N., Arnone D. D., Paul D. J., Norman C. E., Gallas B., Fernandez J. M. and Pepper M.,
1999, Proceedings of the 24th International Conference on the Physics of Semiconductors, edited by David Gershoni World Scientific.

“Silicon-Germanium strained layer materials in microelectronics”
Paul D. J.,
1999, Adv. Mater., 11, 191–204.

“Electron beam induced current of strained Si/SiGe two-dimensional electron gases showing lateral electron confinement”
Norman C. E., Griffin N., Arnone D. D., Paul D. J., Norman C. E., Gallas B., Fernandez J. M. and Pepper M.,
1998, Solid State Phenom., 63-64, 25–32.

“Beyond CMOS: Si heteroepitaxy and nanoelectronics for the superchip of the future”
Paul D. J.,
1998, Proc. Mikroelektronik fur die Informationstechnik, 183–199.

“Electrical properties and uniformity of two-dimensional electron gases grown on cleaned SiGe virtual substrates”
Paul D. J., Ahmed A., Pepper M., Churchill A. C., Robbins D. J., Wallis D. J. and Pidduck A. J.,
1998, J. Vac. Sci. Technol. B, 16, 1644–1647.

“Cyclotron resonance measurements of Si/Si/Ge two-dimensional electron gases with differing strain”
Griffin N., Arnone D. D., Paul D. J., Pepper M., Robbins D. J., Churchill A. C. and Fernandez J. M.,
1998, J. Vac. Sci. Technol. B, 16, 1655–1658.

“Far-infrared cyclotron resonance study of the effect of strain and localisation in Si/SiGe two dimensional electron gases”
Griffin N., Arnone D. D., Paul D. J., Pepper M., Robbins D. J. and Churchill A. C.,
1998, Sol. St. Electron., 42, 1159–1163.

“Silicon quantum integrated circuits - an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques”
Paul D. J., Coonan B., Redmond G., O'Neill B. J., Crean G. M., Hollander B., Mantl S., Zozoulenko I., Berggren K. -F., Lazzari J. -L., Avitaya F. A. d and Derrien J.,
1998, Thin Solid Films, 336, 130–136.

“Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions”
Churchill A. C., Robbins D. J., Wallis D. J., Griffin N., Paul D. J., Pidduck A. J., Leong W. Y. and Williams G. M.,
1998, J. Vac. Sci. Technol. B, 16, 1634–1638.

“Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates”
Paul D. J., Ahmed A., Pepper M., Churchill A. C., Robbins D. J., Wallis D. J. and Pidduck A. J.,
1998, Thin Solid Films, 321, 181–185.

“Silicon Germanium heterostructures in electronics: the present and the future”
Paul D. J.,
1998, Thin Solid Films, 321, 172–180.

“Fabrication of SiGe quantum devices by electron-beam induced damage”
Ryan J. P., Broers A. N., Paul D. J., Pepper M., Whall T. E., Fernander J. M. and Joyce B. A.,
1997, Superlatt. Microstruct., 21, 29–36.

“Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures”
Paul D. J., Ryan J. M., Kelly P. V., Crean G. M., Fernandez J. M., Pepper M., Broers A. N. and Joyce B. A.,
1997, Sol. St. Electron., 41, 1509–1513.

“Gating high mobility silicon-germanium heterostructures”
Griffin N., Paul D. J., Pepper M., Taylor S., Smith J. P., Eccleston W., Fernandez J. M. and Joyce B. A.,
1997, Microelectron. Eng., 35, 309–312.

“Electron beam induced damage of silicon germanium”
Paul D. J., Ryan J. M., Pepper M., Broers A. N., Whall T. E., Fernandez J. M. and Joyce B. A.,
1997, Microelectron. Eng., 35, 59–62.

“High-mobility two-dimensional electron gases in Si/SiGe heterostructures on relaxed SiGe layers grown at high temperature”
Churchill A. C., Robbins D. J., Wallis D. J., Griffin N., Paul D. J. and Pidduck A. J.,
1997, Semicond. Sci. Tech., 12, 943–946.

“Electron beam induced damage of Silicon Germanium”
Paul D. J., Ryan J. M., Pepper M., Broers A. N., Whall T. E., Fernandez J. M. and Joyce B. A.,
1996, J. Vac. Sci. Technol. B, 14, 3834–3838.

“Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator”
Paul D. J., Griffin N., Arnone D. D., Pepper M., Emeleus C. J., Phillips P. J. and Whall T. E.,
1996, Appl. Phys. Lett., 69, 2704–2706.

“Si1-xGex pulsed plasma etching using CHF3 and H2”
Paul D. J., Law V. J. and Jones G. A. C.,
1995, J. Vac. Sci. Technol. B, 13, 2234–2237.

“Cotunneling of holes in silicon-based structures”
Paul D. J., Cleaver J. R. A. and Ahmed H.,
1994, Phys. Rev. B, 49, 16514–16517.

“Fabrication of wires in Silicon-Germanium material”
Paul D. J., Cleaver J. R. A. and Ahmed H.,
1993, Microelectron. Eng., 21, 349–352.

“Coulomb-blockade in silicon-based structures at temperatures up to 50-K”
Paul D. J., Cleaver J. R. A. and Ahmed H.,
1993, Appl. Phys. Lett., 63, 631–632.

“High-resolution scanning electron-microscopy in mesoscopic physics”
Williams D. A., Pettersen E. K. and Paul D. J.,
1993, Inst. Phys. Conf. Ser., 134, 249–252.
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