Publications

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27 items listed; Searching for: Keywords include fqhe

“Silicon Quantum Integrated Circuits: Silicon Germanium Heterostructures Devices: Basics and Realisation”
Kasper E. and Paul D. J.,
2005, Springer - Verlag.

“Evolution of the second lowest extended state as a function of the effective magnetic field in the fractional quantum hall regime”
Chen T. M., Liang C. T., Simmons M. Y., Ritchie D. A. and Pepper M.,
2004, Chinese J. Phys, 42, 307–311.

“Upshift of the fractional quantum Hall plateaux: evidence for repulsive scattering for composite fermions”
Wang H. S., Chiu Y. H., Kim G-H., Liang C-T., Simmons M. Y. and Ritchie D. A.,
2004, Physica E, 22, 135–137.

“Measurements of composite fermion conductivity dependence on carrier density”
Liang C. T., Simmons M. Y., Ritchie D. A. and Pepper M.,
2004, J. Phys.: Condens. Matt., 16, 1095–1101.

“Experimental studies of composite fermion conductivity: dependence on carrier density”
Cheng Y. M., Huang T. Y., Liang C. T., Simmons M. Y., Huang C. F., Smith C. G., Ritchie D. A. and Pepper M.,
2002, Physica E, 12, 105–108.

“Exchange-driven bilayer-to-monolayer charge transfer in an asymmetric double-quantum-well”
Hamilton A. R., Simmons M. Y., Hanna C. B., Diaz-Velez J. C., Pepper M. and Ritchie D. A.,
2002, Physica E, 12, 304–306.

“Tunneling gap collapse and v=2 quantum Hall state in a bilayer-electron-system”
Geer S. J., Davies A. G., Barnes C. H. W., Zolleis K. R., Simmons M. Y. and Ritchie D. A.,
2002, Phys. Rev. B, 66, 045318–1–5.

“Quantum electronics: the physics and technology of low-dimensional electronic systems into the new millenium”
Davies A. G.,
2000, Philos. T. Roy. Soc. A, 358, 151–172.

“A New Spin on the Quantum Hall Effect”
Davies A. G.,
1999, Phys. World, 12, 20–21.

“Current breakdown of the fractional quantum Hall effect through contactless detection of induced currents”
Watts J. P., Usher A., Matthews A. J., Zhu M., Elliott M., Harker W. G. H., Morris P. R., Simmons M. Y. and Ritchie D. A.,
1998, Phys. Rev. Lett., 81, 4220–4223.

“Experimental evidence for a metal-insulator transition and geometric effect in a half-filled Landau level”
Liang C. -T., Frost J. E. F., Simmons M. Y., Ritchie D. A. and Pepper M.,
1998, Physica E, 2, 78–81.

“Non-equilibrium transport along an edge of variable slope in the fractional quantum Hall regime”
Franklin J. D., Ford C. J. B., Simmons M. Y., Ritchie D. A. and Pepper M.,
1998, Physica B, 251, 405–409.

“Measurements of a composite fermion split-gate”
Liang C. -T., Smith C. G., Mace D. R., Nicholls J. T., Frost J. E. F., Simmons M. Y., Hamilton A. R., Ritchie D. A. and Pepper M.,
1996, Surf. Sci., 361-362, 71–74.

“Measurements of a composite fermion split-gate device”
Liang C. -T., Smith C. G., Mace D. R., Nicholls J. T., Frost J. E. F., Simmons M. Y., Hamilton A. R., Ritchie D. A. and Pepper M.,
1996, Phys. Rev. B, 53, R7596–R7598.

“Fractional quantum Hall effect in bilayer two-dimensional hole-gas systems”
Hamilton A. R., Simmons M. Y., Bolton F. M., Patel N. K., Millard I. S., Nicholls J. T., Ritchie D. A. and Pepper M.,
1996, Phys. Rev. B, 54, R5259–R5262.

“Ballistic composite fermions in semiconductor nanostructures”
Frost J. E. F., Liang C. -T., Mace D. R., Simmons M. Y., Ritchie D. A. and Pepper M.,
1996, Phys. Rev. B, 53, 9602–9605.

“The Aharonov-Bohm effect in the fractional quantum Hall regime”
Franklin J. D. F., Zailer I., Ford C. J. B., Simpson P. J., Frost J. E. F., Ritchie D. A., Simmons M. Y. and Pepper M.,
1996, Surf. Sci., 362, 17–21.

“The Aharonov-Bohm effect in the fractional quantum Hall regime”
Ford C. J. B., Simpson P. J., Zailer I., Pepper M., Frost J. E. F., Ritchie D. A. and Jones G. A. C.,
1995, Proceedings of the 22nd International Conference on the Physics of Semiconductors, World Scientific, Ed. D.J. Lockwood, 1987–1990.

“Reflection of edge states in the fractional quantum Hall regime”
Frost J. E. F., Liang C. -T., Mace D. R., Simmons M. Y., Pepper M. and Ritchie D. A.,
1995, Sol. St. Commun., 96, 327–331.

“Universal dissipative resistivity in the fractional quantum Hall-effect of two-dimensional hole systems”
Davies A. G., Ritchie D. A., Frost J. E. F. and Pepper M.,
1995, Phys. Rev. B, 52, R5507–R5510.

“The Aharonov-Bohm effect in the fractional quantum Hall regime”
Ford C. J. B., Simpson P. J., Zailer I., Franklin J. D. F., Barnes C. H. W., Frost J. E. F., Ritchie D. A. and Pepper M.,
1994, J. Phys.: Condens. Matt., 6, L725–L730.

“Low-temperature magneto-photoluminescence investigations of the 2D hole system in p-type GaAs/AlGaAs heterojunctions”
Davies A. G., Mitchell E. E., Clark R. G., Simmonds P. E., Silver T. M., Ritchie D. A., Frost J. E. F., Pepper M. and Jones G. A. C.,
1994, Physica B, 201, 397–402.

“Magneto-photoluminescence as a probe of two-dimensional electron and hole ground states in the extreme quantum limit”
Davies A. G., Mitchell E. E., Clark R. G., Simmonds P. E., Ritchie D. A., Simmons M. Y., Pepper M. and Jones G. A. C.,
1994, Proc. 22nd ICPS, 2, 1460–1463.

“The fractional quantum Hall effect in high mobility two-dimensional hole gases”
Davies A. G., Newbury R., Pepper M., Frost J. E. F., Ritchie D. A. and Jones G. A. C.,
1992, Surf. Sci., 263, 81–86.

“The fractional quantum Hall effect in high mobility two-dimensional hole gases”
Davies A. G., Newbury R., Pepper M., Frost J. E. F., Ritchie D. A. and Jones G. A. C.,
1991, Proc. 20th ICPS.

“Fractional quantum Hall effect in high-mobility two-dimensional hole gases in tilted magnetic fields”
Davies A. G., Newbury R., Pepper M., Frost J. E. F., Ritchie D. A. and Jones G. A. C.,
1991, Phys. Rev. B, 44, 13128–13121.

“The growth and physics of high mobility two-dimensional hole gases”
Davies A. G., Frost J. E. F., Ritchie D. A., Peacock D. C., Linfield E. H., Pepper M., Jones G. A. C. and Newbury R.,
1991, J. Cryst. Growth, 111, 318–322.
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